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SFH309

SFH309 DataSheet Siemens Semiconductor Group NPN-Silizium-Fototransistor Silicon NPN Phototransistor

NPN-Silizium-Fototransistor Silicon Phototransistor

Siemens Semiconductor Group

287.893 千字節

6 頁

Maker Site:
http://www.automation.siemens.com/semiconductor/in

Siemens Semiconductor Group

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---Full Text Search Engine--- SFH309 Siemens Semiconductor Group
---Full Text Search Engine--- NPN-Silizium-Fototransistor Silicon Phototransistor

SFH309FA-5 SFH309 Q62702-P1000 Q62702-P174 Q62702-P176 Q62702-P178
Q62702-P180 Q62702-P859 Q62702-P941 Q62702-P997 Q62702-P998
Q62702-P999 SFH309 SFH309-3 SFH309-4 SFH309-5 SFH309-6 SFH309F
SFH309F-2 SFH309F-3 SFH309F-4 SFH309F-5 SFH309FA SFH309FA-2
SFH309FA-3 SFH309FA-4

SFH320	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320-3	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320-4	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320F	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320F-3	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320F-4	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320FA	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320FA-3	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320FA-4	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH313FA	[Infineon] New: Silicon NPN Phototransistor
SFH313	[Infineon] Neu: NPN-Silizium-Fototransistor
SFH3201	[Infineon] NPN-Silizium-Fototransistor im SMT-Gehuse Silicon NPN Phototransistor in SMT Package
SFH3500FA	[Infineon] NPN Silizium Fototransistor Silicon NPN Phototransistor
SFH3500	[Infineon] NPN Silizium Fototransistor Silicon NPN Phototransistor
SFH3401	[Infineon] NPN-Silizium-Fototransistor Silicon NPN Phototransistor
SFH3505FA	[Infineon] NPN Silizium Fototransistor Silicon NPN Phototransistor
SFH3505	[Infineon] NPN Silizium Fototransistor Silicon NPN Phototransistor
SFH3100F	[Infineon] NPN-Silizium-Fototransistor mit Tageslichtsperrfilter

SFH 309 SFH 309 FA
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
SFH 309 SFH 309 FA
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
Wesentliche Merkmale
q Speziell geeignet fur Anwendungen im
Features
q Especially suitable for applications from
Bereich von 380 nm bis 1180 nm (SFH 309) und bei 880 nm (SFH 309 FA) q Hohe Linearitat q 3 mm-Plastikbauform im LED-Gehause q Gruppiert lieferbar Anwendungen q Lichtschranken fur Gleich- und Wechsellichtbetrieb q Industrieelektronik q "Messen/Steuern/Regeln"
380 nm to 1180 nm (SFH 309) and of 880 nm (SFH 309 FA) q High linearity q 3 mm LED plastic package q Available in groups Applications q Photointerrupters q Industrial electronics q For control and drive circuits
Semiconductor Group
1
01.97
feof6653
feo06653
SFH 309 SFH 309 FA
Typ Type SFH 309 SFH 309-3 SFH 309-4 SFH 309-5 SFH 309-61)
1) 1)
Bestellnummer Ordering Code Q62702-P859 Q62702-P997 Q62702-P998 Q62702-P999 Q62702-P1000
Typ (*vorher) Type (*formerly) SFH 309 FA (*SFH 309 F) SFH 309 FA-2 (*SFH 309 F-2) SFH 309 FA-3 (*SFH 309 F-3) SFH 309 FA-4 (*SFH 309 F-4) SFH 309 FA-5 (*SFH 309 F-51))
Bestellnummer Ordering Codes Q62702-P941 Q62702-P174 Q62702-P176 Q62702-P178 Q62702-P180
Eine Lieferung in dieser Gruppe kann wegen Ausbeuteschwankungen nicht immer sichergestellt werden. Wir behalten uns in diesem Fall die Lieferung einer Ersatzgruppe vor. Supplies out of this group cannot always be guaranteed due to unforseeable spread of yield. In this case we will reserve us the right of delivering a substitute group.
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle  2 mm vom Gehause, Lotzeit t  5 s Dip soldering temperature  2 mm distance from case bottom, soldering time t  5 s Lottemperatur bei Kolbenlotung Lotstelle  2 mm vom Gehause, Lotzeit t  3 s Iron soldering temperature  2 mm distance from case bottom, soldering time t  3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom,  < 10 s Collector surge current Symbol Symbol Wert Value - 55 ... + 100 260 Einheit Unit C C
Top; Tstg TS
TS
300
C
VCE IC ICS
35 15 75
V mA mA
Semiconductor Group
2
SFH 309 SFH 309 FA
Grenzwerte Maximum Ratings (cont'd) Bezeichnung Description Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Kennwerte (TA = 25 C,  = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Symbol Symbol SFH 309 S max  860 Wert Value SFH 309 FA 900 nm Einheit Unit Symbol Symbol Wert Value 165 450 Einheit Unit mW K/W
Ptot RthJA
380 ... 1150 730 ... 1120 nm
Bestrahlungsempfindliche Flache ( 240 m) A Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 25 V, E = 0
0.2 0.45 x 0.45 2.4 ... 2.8
0.2 0.45 x 0.45 2.4 ... 2.8
mm2 mm x mm mm
LxB LxW H

12 5.0 1 ( 200)
 12 5.0 1 ( 200)
Grad deg. pF nA
CCE ICEO
Semiconductor Group
3
SFH 309 SFH 309 FA
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Fotostrom,  = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V SFH 309: Ev = 1000 Ix, Normlicht/ standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2
1) 1)
Symbol Symbol -2 -3
Wert Value -4 -5
Einheit Unit
IPCE IPCE tr, tf
0.4 ... 0.8 0.63 ... 1. 1.0 ... 2.0 1.6 ... 3.2 mA 25 1.5 4.5 7.2 mA 2.8 5 6 7 8 s
VCEsat
200
200
200
200
mV
IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group
Directional characteristics Srel = f ()
Semiconductor Group
4
SFH 309 SFH 309 FA
Semiconductor Group
5
SFH 309 SFH 309 FA
Relative spectral sensitivity, SFH 309 Srel = f ()
Relative spectral sensitivity, SFH 309 FA Srel = f ()
Photocurrent IPCE = f (Ee), VCE = 5 V
Total power dissipation Ptot = f (TA)
Photocurrent IPCE = f (VCE), Ee = Parameter
Dark current ICEO = f (VCE), E = 0
Dark current ICEO = f (TA), VCE = 25 V, E = 0
Capacitance CCE= f (VCE), f = 1 MHz, E = 0
Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V
Semiconductor Group
6